Project Information
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This project has received funding from the ECSEL Joint Undertaking under grant agreement No 737465. This Joint Undertaking receives support from the European Union’s Horizon 2020 research and innovation programme and Germany, Belgium, Ireland. |
Cu-RDL development
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23 October 2019
by Super User
The aim was to realize and use PCM measurement on full wafer scale to evaluate different influences on the interconnect performance.
In detail the e-plating conditions as well the lithography parameters had to be adjusted to cover step heights of 2…18µm. As shown in the picture, the topology on the test chips were covered well. The first measurements and results were presented at the technical meeting in Halle. In general the measured resistances fit quite well to the calculated values. On the basis of these investigations we will apply the processes (e.g. Cu-e-plating) on printed chiplets on target wafer scale during next month.